发明名称 METHOD AND APPARATUS FOR THIN FILM FORMATION BY PLASMA CVD
摘要 <p>According to the method and apparatus of the present invention, a substrate is disposed between a pair of a gaseous material supply electrodes which are grounded and a high frequency power is applied to the substrate as an object of treatment to generate plasma. The gaseous material is fed into this plasma from both of the electrodes and activated. Thus a film is formed on the substrate. Accordingly, a thin film having high corrosion and wear resistance and being solid and compact can be formed easily on the substrate.</p>
申请公布号 WO1989003587(P1) 申请公布日期 1989.04.20
申请号 JP1988001043 申请日期 1988.10.14
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址