| 摘要 |
According to one embodiment, a semiconductor light emitting device (110, 110a, 110b, 111, 112) includes a first metal layer (51), a second metal layer (52), a third metal layer (53), a semiconductor light emitting unit (15) and an insulating unit (80). The semiconductor light emitting unit (15) is separated from the first metal layer (51) in a first direction. The second metal layer (52) is provided between the first metal layer (51) and the semiconductor light emitting unit (15) to be electrically connected to the first metal layer (51), and is light-reflective. The second metal layer (52) includes a contact metal portion (52c), and a peripheral metal portion (52p). The third metal layer (53) is light-reflective. The third metal layer (53) includes an inner portion (53i), a middle portion (53m), and an outer portion (53o). The insulating unit (80) includes a first insulating portion (81), a second insulating portion (82), and a third insulating portion (83). According to the embodiment, a practical semiconductor light emitting device (110, 110a, 110b, 111, 112) having high luminous efficiency can be provided. |
