发明名称 |
Semiconductor photodetector |
摘要 |
A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohmic contact with the first semiconductor layer; and a second main electrode kept in ohmic contact with a portion of the third region, the surface of the third region serving as a light receiving surface.
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申请公布号 |
US4079405(A) |
申请公布日期 |
1978.03.14 |
申请号 |
US19750589675 |
申请日期 |
1975.06.24 |
申请人 |
HITACHI, LTD. |
发明人 |
OHUCHI, HIROBUMI;OKAMURA, MASAHIRO;KAWAKAMI, SUMIO;OGAWA, TAKUZO |
分类号 |
H01L31/00;H01L31/06;(IPC1-7):H01L29/48 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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