| 摘要 |
<p>PURPOSE:To obtain a small-sized, high-output device which has a high gauge rate and a small creep by forming an amorphous semiconductor of a tetrahedral alloy on the surface of a strain inducer, and using it as a strain receiving element. CONSTITUTION:Insulating SiO2 films 7b and 7c are formed on both surfaces of the strain inducer 7 made of a stainless steel plate 7a which has one end put in motion together with an object of measurement (not shown in figure) in one body and also has a weight (not shown in figure) fixed at the other end. The amorphous semiconductor film 7d formed of the tetrahedral alloy (Si:H, SiC, etc.) containing fine crystal and an Al electrode film 7e are formed on the film 7c. The films 7e and 7d are etched to form connection conductor patterns 12-16 and strain receiving element patterns 8-11, and the Al electrode film 7e on the strain receiving element patterns 8-11 is removed. This strain sensing member uses the tetrahedral alloy amorphous semiconductor, so high specific resistance is formed, the high gauge rate and high output are obtained, the size is reduced greatly. Pattern formation is performed directly on the strain inducer 7, so the linearity of the output is good and the creep is small.</p> |
