| 摘要 |
<p>An X-ray mask structure usable in X-ray lithography is disclosed. The mask structure includes an X-ray absorptive material formed into a desired pattern, a supporting film for supporting the absorptive material pattern and a holding frame for holding the supporting film. In order to attain a desired flatness of the supporting film with good efficiency and good precision, a topmost flat end face of the supporting frame is finished to a flatness t (micron) which, where an inner radius of the holding frame denoted by l (mm), an inner radius of an absorptive material pattern region is denoted by r (mm) and a flatness required in the pattern region is denoted by alpha (micron), satisfies a relationship: alpha < t </= l /r x alpha . In another aspect, the holding frame is provided with an inclined portion at its peripheral end portion as well as a groove formed in the inclined portion. The supporting film is adhered to the holding frame by using the groove.</p> |
