| 摘要 |
<p>A bipolar transistor having an intrinsic base portion (33) for forming emitter-base PN junction with an emitter region (39) and an extrinsic base portion (24) for connecting a base electrode is disclosed. A concavity (26) is formed between the intrinsic (33) and extrinsic (24) base portions, and the intrinsic base portion is electrically connected to the base electrode through a passage formed under the concavity and through the extrinsic base portion. The emitter region is contacted at its side to an insulating film (31) formed in the concavity (26).</p> |
