SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The semiconductor device with the high degree of hardness has an electrode and an interconnection film covering an opening region for interconnection. The interconnection film comprises a first metal layer (6) comprising aluminium and a second metal layer (7) comprising aluminium alloy and a layer comprising a mixture of aluminium hydrate (8) and aluminium oxide formed on the second metal layer. The aluminium alloy is aluminium silicon titanium.