发明名称 |
CIRCUIT FOR APPLYING SELECTED VOLTAGES TO DYNAMIC RANDOM ACCESS MEMORY |
摘要 |
A dynamic random access memory (DRAM) includes a selection circuit for selecting the voltages used for aging. The switching circuit operates responsive to external control signals. When a source voltage (Vcc) is selected, the voltage (Vcc) is supplied to one electrode of a memory cell via a circuit 73 and a transmission gate while a ground potential (Vss) is supplied to the other electrode via a bit line and a transistor. Conversely, when the ground potential (Vss) is selected, an inverted voltage is applied across the two electrodes. In this manner, the insulating properties of an insulator interposed between the two electrodes can be checked more reliably during aging.
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申请公布号 |
US5079743(A) |
申请公布日期 |
1992.01.07 |
申请号 |
US19890436587 |
申请日期 |
1989.11.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SUWA, MAKOTO;MIYAMOTO, HIROSHI;MORI, SHIGERU |
分类号 |
G11C11/404;G11C11/401;G11C29/00;G11C29/06;G11C29/50 |
主分类号 |
G11C11/404 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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