Semiconductor device and method of manufacturing the same

摘要

Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device may include a dummy structure formed on a peripheral region of a substrate, and insulating spacers configured to pass through the dummy structure and protrude from an upper surface of the dummy structure. The semiconductor device may include first contact plugs configured to pass through the insulating spacers and protrude from upper surfaces of the insulating spacers.

主权项

1. A semiconductor device comprising:
a dummy structure formed on a peripheral region of a substrate and including first material layers stacked on each other and second material layers interposed between the first material layers, wherein the second material layers have an etching selectivity greater than the first material layers; insulating spacers configured to pass through the dummy structure and protrude from an upper surface of the dummy structure; and first contact plugs configured to pass through the insulating spacers and protrude from upper surfaces of the insulating spacers.