Method for fabricating semiconductor integrated circuit device using an electrode wiring structure

摘要

In a CVD contact formed on a shallow junction having a depth of 0.2 micron or less, the presence of aluminum generates a leakage current at the junction after heat treatment. In order to restrain the leakage current, a barrier metal is formed below the aluminum electrode to form an Al/barrier metal/CVDW (tungsten) structure. A contact free from junction leakage and having a high aspect ratio is thereby realized.