| 摘要 |
<p>A semiconductor element emission element having a Schottky junction in a surface region of a semiconductor, comprises a first region (104) having a first carrier concentration, a second region (103) having a second carrier concentration, and a third region (102) having a third carrier concentration. All of the regions are located below an electrode (107) forming the Schottky junction. The first, second, and third carrier concentrations satisfy a condition that the first carrier concentration (104) of the first region is higher than the second carrier concentration (103) of the second region and that the second carrier concentration of the second region is higher than the third carrier concentration (102) of the third region. The first, second, and third regions have a structure that at least one second region having the second carrier concentration is located inside the third region of the third carrier concentration, and that at lease one first region having the first carrier concentration is located inside said second region having the second carrier concentration. <IMAGE></p> |
