MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

In method for forming metallic wiring of multi-layered structure, the method is characterized by: (a) depositing lower part wiring metal (2) on surface of substrate (1) and forming bare part (4a) by deposition of oxide layer (3) and photoresist film (4) on it sequentially; (b) depositing Al-1 % Si (5) for direct connection with lower part wiring metal (2); (c) forming inter-layered metallic wiring (7) by using of photoresist film (6); (d) forming inter-layered insulator film (10) by using of photoresist film (9); (e) forming upper part wiring metal (11) on it. In this method, the thinly deposited film of oxide on lower part wiring metal can be used as an etching stop layer when inter-layered wiring metal is formed. And when inter-layered wiring metal (7) is formed, it is possible to connect inter-layered wiring metal with lower part wiring metal directly without etching of lower part metallic wiring by making area of inter-layer enlarged than that of oxide layer removed.