Robust pillar structure for semicondcutor device contacts

摘要

Methods and systems for a robust pillar structure for a semiconductor device contacts are disclosed, and may include processing a semiconductor wafer comprising one or more metal pads, wherein the processing may comprise: forming a second metal contact on the one or more metal pads; forming a pillar on the second metal contact, and forming a solder bump on the second metal contact and the pillar, wherein the pillar extends into the solder bump. The second metal contact may comprise a stepped mushroom shaped bump, a sloped mushroom shaped bump, a cylindrical post, and/or a redistribution layer. The semiconductor wafer may comprise silicon. A solder brace layer may be formed around the second metal contact. The second metal contact may be tapered down to a smaller area at the one or more metal pads on the semiconductor wafer. A seed layer may be formed between the second metal contact and the one or more metal pads on the semiconductor wafer. The pillar may comprise copper.

主权项

1. A method for forming a semiconductor contact, the method comprising:
processing a semiconductor wafer comprising a metal pad, wherein said processing comprises:
forming a metal contact on the metal pad;forming a pillar on the metal contact, wherein the pillar is tapered down such that its width decreases toward the metal contact and wherein the metal contact comprises a sloped mushroom shaped bump or a stepped mushroom shaped bump; andforming a solder bump on the metal contact and the pillar, wherein the pillar extends into the solder bump.