Ternary content-addressable memory

摘要

A ternary content-addressable memory comprises a first switch, a first static random-access memory cell, a second switch and a second static random-access memory cell. The first switch is connected between a first search line and a match line. The first switch has a first control electrode. The first static random-access memory cell has a first storage node connected to the first control electrode of the first switch. The second switch is connected between a second search line and the match line. The second switch has a second control node. The second static random-access memory cell has a second storage node connected to the second control electrode of the second switch.

主权项

1. A ternary content-addressable memory, comprising:
a first switch, connected between a first search line and a match line, the first switch having a first control electrode; a first static random-access memory cell, having a first storage node connected to the first control electrode of the first switch; a second switch, connected between a second search line and the match line, the second switch having a second control node; and a second static random-access memory cell, having a second storage node connected to the second control electrode of the second switch; wherein the first switch is a transistor, the first control electrode is a gate electrode of the transistor, a drain electrode of the transistor is directly connected to the first search line, and a source electrode of the transistor is directly connected to the match line; wherein the second switch is a transistor, the second control electrode is a gate electrode of the transistor, a drain electrode of the transistor is directly connected to the second search line, and a source electrode of the transistor is directly connected to the match line.