| 摘要 |
<p>A concave portion (21) having a V-shaped cross section is dug in a semiconductor region (10) of a chip, and a surface of the semiconductor region inclusive of the concave portion (21) is covered with an insulation film (22). A wiring film (23) connected to an integrated circuit device is disposed on the insulation film. A protection film (24) covering the surface of the chip is provided with a window (24a) to expose the concave portion and a portion of the wiring film. The window is covered with a thin metal subbing film (25) connected to the wiring film. A metal protrusion (26) for a bump electrode (20) is provided by an electroplating process so as to protrude from the concave portion. <IMAGE></p> |
