发明名称 |
Discretionary gettering of semiconductor circuits |
摘要 |
A semiconductor wafer (32) is patterned to have gettering areas (36-38) selectively positioned proximate devices (44-46) which require gettering. The areas (36-38) comprise germanium-doped silicon having a germanium concentration of approximately 1.5%-2.0%. The germanium creates a lattice mismatch between the substrate (32) and an epitaxial layer (34) which is sufficient to produce defects capable of gettering contaminants. The gettering areas (36-38) may be formed by selective deposition, selective etching, ion-implantation or selective diffusion techniques.
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申请公布号 |
US5250445(A) |
申请公布日期 |
1993.10.05 |
申请号 |
US19920824770 |
申请日期 |
1992.01.17 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BEAN, KENNETH E.;MALHI, SATWINDER S.;RUNYAN, WALTER R. |
分类号 |
H01L21/322;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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