| 摘要 |
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on the semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer, and a gate electrode formed on the gate insulating layer, includes the steps of: forming the first oxide layer, the oxidation-resistant layer, and the second oxide layer successively on the semiconductor substrate; adjusting the thickness of the oxidation-resistant layer during or after the formation thereof in such a way that the entire oxidation-resistant layer can be oxidized in a post-process in which the oxidation-resistant layer is oxidized except for that region which corresponds to the gate electrode; and oxidizing the oxidation-resistant layer except for the region corresponding to the gate electrode and forming an oxide layer around the gate electrode, whereby the oxidation-resistant layer is entirely oxidized except for the region corresponding to the gate electrode. The resulting silicon oxide layer can be used as an address gate or as the gate insulating layer of an MOS transistor gate for a peripheral circuit.
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