Semiconductor device

摘要

Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

主权项

1. A semiconductor device comprising:
a sequential circuit comprising:
a first transistor comprising a first terminal, a second terminal, and a gate; anda capacitor, wherein the first transistor comprises a semiconductor layer comprising a channel formation region, wherein the semiconductor layer comprises indium, zinc, and oxygen, and wherein a node electrically connected to one electrode of the capacitor and the first terminal of the first transistor is configured to be in a floating state when the first transistor is in an off state.