| 摘要 |
<p>In order to provide a semiconductor device without degradation of characteristics thereof by preventing the diffusion of wiring metal into the element area of the semiconductor device, while at the same time simplifying the process by disposing wiring metal directly above the element area to eliminate the leading of unnecessary wiring, a method for fabricating such semiconductor device having a wiring part connected via an opening portion formed in an insulating film on a semiconductor region to the semiconductor region, including the steps of depositing a polycrystalline semiconductor layer 111 over the opening portion on the semiconductor region 109, ion injecting impurities having large range on the polycrystalline semiconductor layer 111, ion injecting impurities having small range on the polycrystalline semiconductor layer 111, conducting heat treatment after the ion injection of the impurities, and depositing a metal or metal silicide containing a low-melting metal on the polycrystalline semiconductor layer after the heat treatment. <IMAGE></p> |
