Photoresist pattern formation through etching where the imaging exposure changes in a given direction in the desired pattern and inclined vapor deposition is utilized to deposit a film

摘要

The fine pattern processing method comprises an exposure step for forming a resist pattern having a predetermined opening on a substrate, a vapor deposition step for forming a vapor deposited film on a portion of the substrate which is exposed at the opening by performing an inclined vapor deposition over the resist pattern, and an etching step for performing the etching treatment with use of the vapor deposited film as a mask. In the exposure step, the exposure time of the photoresist is continuously varied within the wafer plane in relation to the continuous changes in the vapor deposition angles within the wafer plane during the inclined vapor deposition, so that the taper angle of the resist pattern is changed. In other words, the exposure time is shortened at the region where the vapor deposition angle is small so as to increase the taper angle of the resist pattern, whereas the exposure time is prolonged at the region where the vapor deposition angle is large in order that the taper angle is decreased.