3D non-volatile memory device and method for operating and fabricating the same

摘要

A 3D non-volatile memory device includes a plate-type lower select line formed over a substrate, a lower select transistor formed in the lower select line, a plurality of memory cells stacked over the lower select transistor, an upper select transistor formed over the memory cells, and a line-type common source line formed over the substrate and spaced from the lower select line.

主权项

1. A read method of a 3D non-volatile memory device,
wherein the 3D non-volatile memory device comprises:
a plate-type lower select line formed over a substrate and having a first conductive type and a lower select transistor buried in the lower select line;a device isolation layer formed in the substrate; anda line-type contact plug formed over the lower select line, wherein the read method comprises:
grounding a line-type common source line which is formed over the substrate so as to be spaced from the lower select line and has the first conductive type;grounding a well area which is formed in the substrate between the lower select transistor and the common source line and has a second conductive type different from the first conductive type; andactivating the lower select line depending on a read operation of a corresponding string, wherein the common source line is formed to be contacted with the device isolation layer and horizontally spaced from the lower select line, and wherein the line-type contact plug is formed in parallel with the common source line.