| 摘要 |
1501736 Gallium phosphide INTERNATIONAL BUSINESS MACHINES CORP 26 Sept 1975 [17 Dec 1974] 39468/75 Heading C1C [Also in Division H1] A thin epitaxial layer of gallium phosphide is pyrolytically deposited from an organo-metallic system on a silicon substrate, and a further layer, at least the first deposited part of which is also of gallium phosphide, deposited over the thin layer in a halide transport process. As described the substrate with its face oriented in or 3 degrees off a 100 plane is initially baked in hydrogen at 1100‹ C. for 2 minutes, the pyrolytic layer deposited to a thickness of 0À1-10 Á from a mixture of gallium trimethyl and phosphine in hydrogen, and then the further layer deposited with the substrate at 700-780‹ C. for 75-150 minutes to a thickness of 10-40 Á from a mixture of hydrogen chloride and phosphine in hydrogen which has flowed over liquid gallium. In a variant after 2-5 Á of GaP has been deposited arsine may be introduced into the flow in a gradually increasing amount so that the subsequently deposited material is gallium arsenide phosphide. An apparatus for performing the first deposition step is disclosed.
|
