| 发明名称 |
Stacked capacitor process using BPSG precipitates |
| 摘要 |
A MOST capacitor for use in a DRAM is formed by using BPSG precipitates after densification as a mask for etching a BPSG layer to form BPSG islands. The BPSG islands are then used as a mask for etching a polysilicon layer to form pillars in the polysilicon layer.
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| 申请公布号 |
US5466627(A) |
申请公布日期 |
1995.11.14 |
| 申请号 |
US19940214608 |
申请日期 |
1994.03.18 |
| 申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
LUR, WATER;LIN, JENN-TARNG;CHIN, HSIAW-SHENG |
| 分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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代理人 |
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| 主权项 |
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