| 摘要 |
FIELD: chemistry.SUBSTANCE: invention relates to production of indium oxide-containing layers from an anhydrous solution. In the method, an anhydrous composition, containing at least one indium-halogen-alkoxide of general formula InX(ORwherein R is an alkyl and/or alkoxyalkyl residue and X is F, Cl, Br or I, and at least one solvent or dispersion medium, is deposited in a defined sequence in an anhydrous atmosphere on a substrate; the composition deposited on the substrate is irradiated with electromagnetic radiation with wavelength ≤360 nm and optionally dried and then thermally converted into an indium oxide-containing layer. The disclosed method of producing indium oxide-containing layers is suitable for making thin structures, and does not require high energy flux density for a long period of time and high hardware costs.EFFECT: method enables to form said layers with improved electrical properties.16 cl, 3 ex |
