CAPACITOR MANUFACTURE METHOD OF SEMICONDUCTOR DRAM CELL

摘要

classifying a field region and an active region on a semiconductor substrate(51) to define a region(57) to form a capacitor node to grow a thick oxide film(58) on the region(57); forming a gate electrode and a source/drain region to deposit an insulating oxide film to open the region(57) to form the capacitor node and wet-etching of the oxide neighboring on the thick oxide(58) film; depositing a polysilicon to form a node electrode of the capacitor to form the node electrode(70) by etching the node polysilicon; and forming a dielectric film and a plate electrode of the capacitor on the surface of the node electrode(70).