THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

Provided are a thin-film transistor and manufacturing method thereof, array substrate and display device. The thin-film transistor comprises: a substrate (11), and an active layer (12), a source electrode (13), a gate electrode and a drain electrode (14) formed on the substrate (11). Two ends of the active layer (12) are respectively connected to the source electrode (13) and the drain electrode (14). The gate electrode comprises a top gate (15) and a bottom gate (16). The top gate (15) comprises an upper top gate (15a) and a side top gate (15b) connected to the upper top gate (15a). The upper top gate (15a) and the bottom gate (16) are oppositely disposed in a direction perpendicular to the substrate (11), and the side top gate (15b) extends from the upper top gate (15a) towards the substrate (11). The active layer (12) is sandwiched between the upper top gate (15a) and the bottom gate (16), and a sidewall of the active layer (12) is at least partially surrounded by the side top gate (15b). The gate electrode, the source electrode (13) and the drain electrode (14) are manufactured by an opaque conductive material.