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发明名称
DUAL GATE FIELD EFFECT TRANSISTOR WITH PROTECTIVE DIODE AND ITS PATTERN STRUCTURE
摘要
申请公布号
JPH09283770(A)
申请公布日期
1997.10.31
申请号
JP19960086322
申请日期
1996.04.09
申请人
SONY CORP
发明人
TANAKA SHINICHI
分类号
H01L27/06;H01L21/06;H01L21/8232;H01L29/80;H01L29/866;(IPC1-7):H01L29/80;H01L21/823
主分类号
H01L27/06
代理机构
代理人
主权项
地址
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