发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes a substrate, a plurality of memory cells, a logic gate electrode and a high-voltage gate electrode. The substrate at least includes a memory area, a high-voltage area and a logic area. The memory cells are disposed in the memory area. The logic gate electrode is disposed on the logic area. The high-voltage gate electrode has a first portion and a second portion in contact with each other and stacked on the high-voltage area. The high-voltage gate electrode has a thickness substantially greater than that of the logic gate electrode. |
申请公布号 |
US9472562(B1) |
申请公布日期 |
2016.10.18 |
申请号 |
US201514726984 |
申请日期 |
2015.06.01 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Zhao Qiu-Ji;Wu Ling;Meng Wei;Jiao Zhi-Hui;Li Zhi-Guo;Ren Chi |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
WPAT, PC |
代理人 |
WPAT, PC ;King Justin |
主权项 |
1. A semiconductor device, comprising:
a substrate, at least comprising a memory area, a high-voltage area and a logic area; a plurality of memory cells, disposed on the memory area; a logic gate electrode, disposed on the logic area; and a high-voltage gate electrode, having a first portion and a second portion in contact with each other and stacked on the high-voltage area, wherein the high-voltage gate electrode has a thickness substantially greater than that of the logic gate electrode. |
地址 |
Hsinchu TW |