发明名称 |
Memory cell array |
摘要 |
The memory cell array of the present invention has a plurality of memory cell, four memory cells hold a junction region in common. In the each memory cell, a portion of the tunnel oxide layer overlapped with the junction region is thinner than the other portion so that an individual programming operation of the each memory cell can be performed and an integration density of device can be increased.
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申请公布号 |
US5804854(A) |
申请公布日期 |
1998.09.08 |
申请号 |
US19970919401 |
申请日期 |
1997.08.29 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JUNG, SUNG MUN;KIM, JONG HO |
分类号 |
H01L21/8247;G11C16/04;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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