发明名称 Test method and circuit for semiconductor memory
摘要 <p>A checkerboard data pattern is written in a semiconductor memory with a simple arrangement. First, memory cell transistors M00-M77 are erased. A test signal TS is turned to "L," an address ax0 to "1," write signals D0, D2, D4 and D6 to "1." This causes "1" to be written in the memory cell transistors even-numbered in both the rows and columns. Then, the test signal TS is turned to "L," an X address ax0 to "0," write signals D1, D3, D5 and D7 to "1." This causes "1" to be written in the memory cell transistors odd-numbered in both the rows and columns. Thus, the checkerboard can be written with a simple arrangement by activating only the least significant bit ax0 of X addresses ax2-ax0. &lt;IMAGE&gt;</p>
申请公布号 EP0871179(A1) 申请公布日期 1998.10.14
申请号 EP19980105845 申请日期 1998.03.31
申请人 NEC CORPORATION 发明人 HIROYUKI, KOBATAKE
分类号 G11C16/06;G01R31/28;G11C29/10;G11C29/34;H01L21/66;H01L21/822;H01L21/8247;H01L27/04;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C29/00 主分类号 G11C16/06
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