| 摘要 |
A semiconductor imaging device includes a semiconductor radiation detector substrate, for example of cadmium zinc telluride, with at least two faces. A first face has at least one charge output contact formed from electrically conductive material or materials and a second face having a contact formed from electrically conductive material or materials. The second face contact is for applying a bias voltage to provide an electric field between the first and second faces. The second face contact, or a third face of the semiconductor imaging device, or an edge between the second and third faces has deposited thereon at least a partial covering of a further material different from the electrically conductive material or materials of the second face contact. The deposited material can be a semiconductor, insulating or passivation material, for example aluminium nitride. Such a radiation detector can provide linear detector behaviour for all possible combinations of exposure and X-ray tube voltage. |
