发明名称 LOW-MELTING GLASS FOR FORMING TRANSPARENT INSULATING FILM
摘要 PROBLEM TO BE SOLVED: To obtain a low-melting glass for remarkably suppressing the erosion of a produced transparent electrode wire, by adding a specified amount of an oxide constituting the component of the transparent electrode wire to an SiO2 -B2 O3 -PbO-ZnO-based base component. SOLUTION: In the case of using an ITO film as an electrode wire, for example, In2 O3 and/or SnO2 as an oxide is previously introduced into a low-melting glass component and in the case of using an SiO2 film as the electrode wire, SnO2 into the low-melting glass component. The amount of the oxide added is 0.5-5 wt.%, the softening point of glass is <=550 deg.C and the coefficient of thermal expansion is 77-90×10<-7> / deg.C in the temperature range from normal temperature to 300 deg.C. A dielectric substance layer 3αof a transparent insulating film is obtained by applying a mixture composed of low-melting glass powder and a paste oil to a front base glass 1 and a transporting electrode 2 by screen printing, etc., and baking. An address electrode 7 and a fluorescent substance 8 are arranged on a back base glass 6. A rare gas 11 (e.g. Ne gas) is sealed in a space (discharge space) between the base glass 1 and the back base glass 6.
申请公布号 JPH10316451(A) 申请公布日期 1998.12.02
申请号 JP19980065715 申请日期 1998.03.16
申请人 FUJITSU LTD;CENTRAL GLASS CO LTD 发明人 AWAJI NORIYUKI;BETSUI KEIICHI;NISHIKAWA KAZUHIRO;TAKAYAMA AYUMI
分类号 C03C8/10;H01B3/00;H01B3/08;(IPC1-7):C03C8/10 主分类号 C03C8/10
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