| 摘要 |
The present invention relates to a vertical bipolar power transistor primarily intended for radio frequency applications and to a method for manufacturing said bipolar power transistor. The power transistor comprises a substrate (13), a collector layer (15) of a first conductivity type on the substrate, a base (19) of a second conductivity type electrically connected to the collector layer, an emitter (21) of said first conductivity type electrically connected to the base, said base and said emitter each being electrically connected to a metallic interconnecting layer (31, 33), said interconnecting layers (31, 33) being at least in parts separated from the collector layer (15) by an insulation oxide (17). According to the invention the power transistor substantially comprises a field shield (25) electrically connected to the emitter, and located between the metallic interconnecting layer of the base and the insulation oxide. |
