| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of suppressing two-stage-on phenomenon when turning on a semiconductor device.SOLUTION: An IGBT region 3 comprises a p-type bottom body region 14 formed on a surface side of a drift region 13, an n-type barrier region 15 formed on a surface side of the bottom body region 14, and a p-type top body region 16 formed on a surface side of the barrier region 15. A diode region 4 comprises a p-type bottom anode region 22 formed on a surface side of the drift region 13, an n-type barrier region 25 formed on a surface side of the bottom anode region 22, and a p-type top anode region 23 formed on a surface side of the barrier region 25. The diode region 4 extends from a surface of a semiconductor substrate 2 to a position reaching the barrier region 25 through the top anode region 23, and includes an n-type pillar region 20 connected to a surface electrode 5 and the barrier region 25. Impurity concentration of the top body region 16 is lower than impurity concentration of the bottom anode region 22.SELECTED DRAWING: Figure 1 |
