Process of producing a photoelectric conversion device and an image sensor

摘要

To make the thickness of an interlevel insulating film uniform and suppress variations in output signal, in a photoelectric conversion element including a plurality of photoelectric conversion portions (2), and light-shielding units (11, 12) having openings formed above the photoelectric conversion portions, the light-shielding units have first light-shielding layers (11), and second light-shielding layers (12) formed on the first light-shielding layers via an interlevel insulating film (13). The first light-shielding layers have gaps (GP) for allowing two adjacent openings (OP) to communicate with each other. The second light-shielding layers have light-shielding portions (12a) above the gaps of the first light-shielding layers. <IMAGE>