Electrostatic discharge protection circuit

摘要

A semiconductor memory device conserves chip area by jointly connecting transistors which are respectively connected to pads adjacent to each other. The device includes first and second electrostatic discharge protection MOSFET transistors which have drains respectively connected to pads adjacent to each other and which define a first active area. A common source is arranged between the first and second transistors areas and defines a second active area in common to both transistors. The device is connected to a single power supply at the gates and sources thereof. The transistors also share common active ground lines.