| 摘要 |
PROBLEM TO BE SOLVED: To reduce a catalyst element in a crystal silicon film by opening an insulating thin film, exposing an amorphous silicon film, adding the catalyst element promoting the crystallization of the amorphous silicon film, selectively leaving it only in an opening, and obtaining the crystal silicon film in crystal growth from the opening to a periphery. SOLUTION: An insulating thin film 104 is installed on an amorphous silicon film 103 formed on a substrate 101. The opening 100 is formed in the prescribed area of the insulating thin film 104 and a part of the amorphous silicon film 103 is exposed. A catalyst element 105 promoting the crystallization of the amorphous silicon film 103 is added on a surface. Then, only the catalyst element existing on the insulating thin film 104 is selectively removed. The amorphous silicon film 103 is crystal-grown from the opening 100 to the peripheral area, namely, in a direction parallel to the surface of the substrate 101 by heating it so as to obtain a crystal silicon film 103b. The active area (element area) of a semiconductor device is formed in the area of the crystal silicon film 103b.
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