| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple technique (trench) in which the capacity loss of a semiconductor device with regard to a substrate is reduced, whereby the value of the Q-value of an on-chip inductor is further increased. SOLUTION: An integrated circuit 10 comprises a semiconductor substrate 12, a plurality of trenches 30 which are formed in the substrate are substantially parallel to each other and are separated from each other have each sidewall covered with an insulator 32, and are filled with a material 35 forming a continuous upper surface on the plurality of the trenches 30, an insulator layer 15 formed on the plurality of trenches separated from each other, and electronic devices, such as inductors 37, 38 and 39 formed over the plurality of the trenches separated from each other. As a result, a high-resistance region with regard to the substrate is formed of the plurality of trenches, which are located under the electronic devices and are separated from each other.
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