| 摘要 |
PROBLEM TO BE SOLVED: To suppress the concentration of electric field in the pn junction without eliminating merits of an LDD structure and also suppress effectively the hot carrier effect and leakage current. SOLUTION: An insulation film 9 works as a protection film for the main surface of a semiconductor substrate 100 when a side wall 10 is formed by anisotropic etching, so that the main surface is prevented from being damaged by etching. Therefore, the concentration of electric field in the pn junction part is relieved and the merits of an LDD structure are utilized effectively. A part of the insulation film 9 jutted outside from the side wall 10 is removed, so that it is unnecessary to be etched when forming a contact hole 12, and only an insulation film 11 can be etched selectively. Thus, a short circuit between a main electrode 13 and a gate electrode 7 can be prevented, and a distance between contact holes 12 can be set to be smaller than a width of the gate electrode 7.
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