发明名称 FORMATION OF THREE-DIMENSIONAL DEVICE STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a three-dimensional device structure by which a three-dimensional device structure is efficiently formed even when a face on which the structure is formed is sterical. SOLUTION: A stage for plotting a desired pattern on an object 1 to be coated with a film with an insulator soln., heating and drying the soln. to selectively form an insulating film 4 and a stage for plotting a desired pattern with a silane coupling agent, heating and drying the soln. to activate the surface and selectively forming a metallic film 5 by chemical plating are performed with a specified combination and order. At least a part of the insulating film 4 or the metallic film 5 is removed in a specified stage.
申请公布号 JP2000204479(A) 申请公布日期 2000.07.25
申请号 JP19990007503 申请日期 1999.01.14
申请人 RITSUMEIKAN 发明人 KONISHI SATOSHI
分类号 C23C18/18;H01L21/288;(IPC1-7):C23C18/18 主分类号 C23C18/18
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