Thin film transistor matrix formation for LCD screen, by photolithographically structuring semiconductor layer to generate semiconductor channel

摘要

The method involves photolithographically structuring a semiconductor layer to generate a semiconductor channel. The semiconductor layer is structured by forming a photosensitive layer that overlaps a second conductive layer to completely cover a matrix. Forming a thin film transistor matrix for an LCD screen comprises depositing a conductive layer to form lines and gate contacts. A gate insulator is deposited followed by a semiconductor a-Si:H layer (9). A second conductive layer (11-14) is deposited to form source/drain contacts. The semiconductor layer is then photolithographically structured to generate the semiconductor channel. The semiconductor layer is structured by forming a photosensitive layer (16-18) that overlaps the second conductive layer to completely cover the matrix.