| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the characteristics of a semiconductor device having a capacitive element. SOLUTION: A semiconductor element, in which at least an insulated gate field-effect transistor and a capacitance element are formed on a semiconductor substrate 1, has a gate insulating film having at least a thermally oxidized film formed on the surface of the substrate 1 and a gate electrode formed on the insulating film. The capacitance element is constituted in such a way that its first electrode 21 is composed of a semiconductor area 2 formed in such a state that the electrode 21 is faced to the surface of the substrate 1 and containing an impurity at a high concentration and its dielectric film 23 is composed of an insulating film 3 deposited on the area 2, and then, a second electrode 22 is formed to face the first electrode 21 on the insulating film 3. The gate electrode of the insulated gate field effect transistor and the second electrode 22 formed on the dielectric film 23 of the capacitance element are formed of dielectric films having the same constitution.
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