| 摘要 |
PROBLEM TO BE SOLVED: To realize an etching method and device, where etching is easily controlled, a product can be improved in yield, and etching liquid can be effectively utilized and replaced in a shorter time. SOLUTION: In an etching method, where a semiconductor wafer W is dipped into an etching liquid E kept in a processing bath 10 for etching, Si is dissolved into the etching liquid E kept in the processing bath 10 from the surface of the semiconductor wafer W, the Si concentration of the etching liquid E is detected by a concentration detecting sensor 50. When it is found that the concentration of Si contained in the etching liquid E reaches a prescribed value, an open/close valve 32 of an exhaust means 30 is opened to discharge a prescribed amount of the etching liquid E kept in the processing bath 10, while an open/close valve 43 of a feed means 40 is opened to replenish the processing bath 10 with a new etching liquid E of nearly the same volume with the discharged etching liquid E to control to etching liquid E in concentration and a semiconductor wafer W in etching quantity.
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