METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To suppress variations in characteristics of a semiconductor device.SOLUTION: There is provided a technique comprising the steps of: a first polishing step of polishing a substrate in which a metal film is formed on a first insulating film formed with a plurality of wiring grooves as a first layer of a metal wiring; an insulating film forming step of forming a second insulating film composed as a part of a laminated insulating film on the substrate after the first polishing step; a second polishing step of polishing the second insulating film; a measuring step of measuring a film thickness distribution in a substrate surface of the second insulating film after the second polishing step; and a correcting step of forming a third insulating film composed as a part of the laminated insulating film on the second insulating film in a film thickness distribution different from the film thickness distribution measured by the measuring step and correcting the film thickness distribution of the laminated insulating film.SELECTED DRAWING: Figure 1