发明名称 VERY HIGH FREQUENCY AND LOW NOISE AMPLIFIER CIRCUIT AND DESIGNING METHOD THEREOF
摘要 PURPOSE: A very high frequency and low noise amplifier circuit and a designing method thereof are provided to obtain a technical effect providing theoretical ground of tuning and to reduce costs by reducing of development time and experimental frequency by theoretically analysing difference between design and measurement. CONSTITUTION: A very high frequency and low noise amplifier circuit comprises a first matching circuit(100), a first transistor(200), a first inductor(400), a second matching circuit(500), a second transistor(600), a second inductor(1000), and a third matching circuit(1100). The first matching circuit receives very high frequency signal to be matched with impedance of the first transistor. The second matching circuit receives output signal outputted through a drain of the first transistor to be matched with impedance for minimizing signal reflected between the second transistor. The third matching circuit receives output signal outputted through a drain of the second transistor to be matched with the output of a characteristics impedance.
申请公布号 KR100290649(B1) 申请公布日期 2001.03.05
申请号 KR19980009319 申请日期 1998.03.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 OH, GYEONG BONG
分类号 H03F3/189;(IPC1-7):H03F3/189 主分类号 H03F3/189
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