| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench element isolation technique which can suppress kinks (hums) or reverse short channel effect and improve the electrical characteristics of a transistor by eliminating the so-called edge drop of a trench element isolation insulating film. SOLUTION: The method includes the steps of forming a groove 14 in a semiconductor substrate 11, forming an inner wall oxide film 16 on the inner face of the groove 14 and on a part of the substrate on the opening side of the groove 14, forming an element isolation insulating film 17 to be embedded in the interior of the groove 14, removing an excess film 17 to selectively leave the film 17 within the groove 14, and removing the oxide films (pad oxide film 12 and sacrificial oxide film 18) formed on the substrate 11 to expose the surface of the substrate 11. The oxide films, having an inner wall oxide film 16 formed on the substrate 11, are removed to form a thick film left.
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