| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of heating a substrate for a semiconductor manufacturing equipment by which a change in film thickness of a first wafer can be suppressed when a plurality of wafers are consequently heat-treated. SOLUTION: A plurality of preliminarily prepared wafers are consequently carried into a processing chamber 2 of a heat treatment equipment 1, one at a time, and each wafer is heat-treated on a substrate supporting member 3, Before a wafer carried into the chamber 2 a first wafer is heat-treated, the processing chamber 2 is preheated to make the condition in the processing chamber 2 when it heat-treats the first wafer closer to one when it heat-treats the second wafer onwards, resulting on suppressing the decrease in film thickness of the first wafer.
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