| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method and a processing apparatus of a semiconductor device for improving characteristics in an interlayer film formed under a sputtered film. SOLUTION: A processing apparatus 10 of a semiconductor device includes at least a first means 2 for plasma-etching a given part of a semiconductor device 40 with an inert gas of Ar, a second means 3 for heat-treating at least the given part of the semiconductor device 40 at least 650 deg.C with infrared ray lamp or the like, a third means 4 for sputtering the given part of the semiconductor device 40 in the same vacuum atmosphere generating means 1.
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