发明名称 |
SEMICONDUCTOR COMPONENT |
摘要 |
The invention relates to a semiconductor component comprising two semiconductor bodies (3, 11), which are spatially separated from one another and electrically interconnected. According to the invention, a compensation MOS field effect transistor (23) is provided as the first semiconductor body (3), and a silicon carbide Schottky diode is provided as the second semiconductor body (11). |
申请公布号 |
WO0186722(A2) |
申请公布日期 |
2001.11.15 |
申请号 |
WO2001EP05216 |
申请日期 |
2001.05.08 |
申请人 |
INFINEON TECHNOLOGIES AG;HERFURTH, MICHAEL;RUPP, ROLAND;ZVEREV, ILIA |
发明人 |
HERFURTH, MICHAEL;RUPP, ROLAND;ZVEREV, ILIA |
分类号 |
H01L23/13;H01L25/04;H01L25/18 |
主分类号 |
H01L23/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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