发明名称 SEMICONDUCTOR MEMORY AND ITS REDUNDANCY METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory in which the power consumption can be reduced and of which manufacture is easy. SOLUTION: This device is a semiconductor memory having a redundancy circuit RC replacing a defective memory cell by a redundancy memory cell in accordance with redundancy information, and provided with a charge pump 5 for programming redundancy information by dielectric-breaking down selectively a capacitor, and a redundancy control circuit 3 reproducing programmed redundancy circuit RC by supplying the prescribed electric charges to the capacitor and refreshing, and supplying reproduced redundancy information to the redundancy circuit RC.
申请公布号 JP2002042483(A) 申请公布日期 2002.02.08
申请号 JP20000219756 申请日期 2000.07.19
申请人 FUJITSU LTD 发明人 MATSUZAKI YASURO;FUNATSU TSUNEO
分类号 G06F12/16;G11C11/401;G11C11/406;G11C17/18;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G06F12/16
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